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PSMN008-75P Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. PSMN008-75P
Description  N-channel enhancement mode field-effect transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PSMN008-75P Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 18 September 2000
2 of 14
9397 750 07495
© Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol
Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
75
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V
75
A
Ptot
total power dissipation
Tmb =25 °C
230
W
Tj
junction temperature
175
°C
RDSon
drain-source on-state resistance
VGS =10V; ID = 25 A
7.9
8.5
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
75
V
VDGR
drain-gate voltage (DC)
Tj =25to175 °C; RGS =20kΩ−
75
V
VGS
gate-source voltage (DC)
−±20
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V;
Figure 2 and 3
75
A
Tmb = 100 °C; VGS =10V;
Figure 2 and 3
75
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 µs;
Figure 2 and 3
240
A
Ptot
total power dissipation
Tmb =25 °C; Figure 1
230
W
Tstg
storage temperature
−55
+175
°C
Tj
operating junction temperature
−55
+75
°C
Source-drain diode
IS
source (diode forward) current
(DC)
Tmb =25 °C
75
A
ISM
peak source (diode forward)
current
Tmb =25 °C; pulsed; tp ≤ 10 µs
240
A
Avalanche ruggedness
EAS
non-repetitive avalanche energy
unclamped inductive load; ID =75A;
tp = 0.1 ms; VDD ≤ 15 V;
RGS =50 Ω; VGS = 10 V; starting
Tj =25 °C; Figure 4
360
mJ
IAS
non-repetitive avalanche current
unclamped inductive load;
VDD ≤ 15 V; RGS =50 Ω;
VGS =10V; Figure 4
75
A


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