PSMN008-75P datasheet(7/14 Pages) PHILIPS

Part #	PSMN008-75P

Description	N-channel enhancement mode field-effect transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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7 / 14 page

Philips Semiconductors

PSMN008-75P; PSMN008-75B

N-channel enhancement mode ﬁeld-effect transistor

Product speciﬁcation

Rev. 01 — 18 September 2000

7 of 14

9397 750 07495

ID = 1 mA; VDS =VGS

Tj =25 °C; VDS =5V

Fig 10. Gate-source threshold voltage as a function of

junction temperature.

Fig 11. Sub-threshold drain current as a function of

gate-source voltage.

Tj =25 °C and 175 °C; VDS > ID × RDSon

VGS = 0 V; f = 1 MHz

Fig 12. Forward transconductance as a function of

drain current; typical values.

Fig 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values.

03aa32

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

-60

-20

20

60

100

140

180

V

GS(th)

T

j

(

o

C)

(V)

max.

typ.

min

03aa35

10-6

10-5

10-4

10-3

10-2

10-1

01

23

45

max

typ

min

V

GS

(V)

ID

(A)

03ac71

0

10

20

30

40

50

60

70

80

90

100

0

10203040

5060708090 100

ID (A)

(S)

g

fs

VDS > ID X RDSon

Tj = 25

o

C

175

o

C

03ac68

102

103

104

10-1

1

10

102

VDS (V)

Ciss, Coss,

Crss (pF)

Ciss

Coss

Crss

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PSMN008-75P Datasheet(PDF) 7 Page - NXP Semiconductors

PSMN008-75P Datasheet(HTML) 7 Page - NXP Semiconductors

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