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PSMN008-75P Datasheet(PDF) 7 Page - NXP Semiconductors |
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PSMN008-75P Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 14 page Philips Semiconductors PSMN008-75P; PSMN008-75B N-channel enhancement mode field-effect transistor Product specification Rev. 01 — 18 September 2000 7 of 14 9397 750 07495 © Philips Electronics N.V. 2000. All rights reserved. ID = 1 mA; VDS =VGS Tj =25 °C; VDS =5V Fig 10. Gate-source threshold voltage as a function of junction temperature. Fig 11. Sub-threshold drain current as a function of gate-source voltage. Tj =25 °C and 175 °C; VDS > ID × RDSon VGS = 0 V; f = 1 MHz Fig 12. Forward transconductance as a function of drain current; typical values. Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03aa32 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -60 -20 20 60 100 140 180 V GS(th) T j ( o C) (V) max. typ. min 03aa35 10-6 10-5 10-4 10-3 10-2 10-1 01 23 45 max typ min V GS (V) ID (A) 03ac71 0 10 20 30 40 50 60 70 80 90 100 0 10203040 5060708090 100 ID (A) (S) g fs VDS > ID X RDSon Tj = 25 o C 175 o C 03ac68 102 103 104 10-1 1 10 102 VDS (V) Ciss, Coss, Crss (pF) Ciss Coss Crss |
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