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PSMN008-75P Datasheet(PDF) 6 Page - NXP Semiconductors

Part No. PSMN008-75P
Description  N-channel enhancement mode field-effect transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PSMN008-75P Datasheet(HTML) 6 Page - NXP Semiconductors

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Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 18 September 2000
6 of 14
9397 750 07495
© Philips Electronics N.V. 2000. All rights reserved.
Tj =25 °CTj =25 °C and 175 °C; VDS > ID × RDSon
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 9.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ac64
0
10
20
30
40
50
60
70
80
90
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS (V)
ID
(A)
5.0 V
4.5 V
4.3 V
4.1 V
3.9 V
VGS = 6.0 V
Tj = 25
o
C
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
VGS (V)
ID
(A)
03ac67
VDS > ID X RDSon
Tj = 150
o
C
Tj = 25
o
C
03ac66
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0
1020
3040506070
8090 100
I D (A)
R DSon
(
Ω)
4.3 V
4.1 V
3.9 V
4.5 V
5.0 V
VGS = 10 V
Tj = 25
o
C
03aa29
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=


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