CM2020-00TR_11 datasheet(5/9 Pages) ONSEMI

Part #	CM2020-00TR

Description	HDMI Transmitter Port Protection and Interface Device

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Manufacturer	ONSEMI [ON Semiconductor]

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CM2020−00TR

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5

SPECIFICATIONS (Cont’d)

Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

ICC5V

Operating Supply Current

5V_SUPPLY = 5.0 V

110

130

mA

ICCLV

Bias Supply Current

LV_SUPPLY = 3.3 V

1

5

mA

VDROP

5V_OUT Overcurrent Output Drop

5V_SUPPLY = 5.0 V,

IOUT = 55 mA

65

100

mV

ISC

5V_OUT Short Circuit Current Limit

5V_SUPPLY = 5.0 V,

5V_OUT = GND

90

135

175

mA

IOFF

OFF State Leakage Current, Level Shifting

NFET

LV_SUPPLY = 0 V

0.1

5.0

mA

IBACKDRIVE

Current Conducted from Output Pins to

V_SUPPLY Rails when Powered Down

5V_SUPPLY < VCH_OUT

Signal Pins: TMDS_D[2:0]+/−,

TMDS_CK+/−, CE_REMOTE_OUT,

DDC_DAT_OUT, DDC_CLK_OUT,

HOTPLUG_DET_OUT, 5V_OUT

Only

0.1

5.0

mA

IBACKDRIVE,

CEC

Current through CE−REMOTE_OUT when

Powered Down

CE−REMOTE_IN = LV_SUPPLY <

CE_REMOTE_OUT

0.1

1.0

mA

VON

VOLTAGE Drop Across Level Shifting NFET

when ON

LV_SUPPLY = 2.5 V, VS = GND,

IDS = 3 mA

75

95

140

mV

VF

Diode Forward Voltage

Top Diode

Bottom Diode

IF = 8 mA, TA = 25°C

0.60

0.85

0.95

V

VESD

ESD Withstand Voltage, Contact Discharge

per IEC 61000−4−2 Standard (IEC)

Pins 4, 7, 10, 13, 20, 21, 22, 23, 24,

27, 30, 33, 38; TA = 25°C (Note 2)

±8

kV

VCL

Channel Clamp Voltage

Positive Transients

Negative Transients

TA = 25°C, IPP = 1 A, tP = 8/20 uS

(Note 3)

10.8

−2.1

V

RDYN

Dynamic Resistance

Positive Transients

Negative Transients

IPP = 1 A, tP = 8/20 mS, TA = 25°C

(Note 3)

1.4

0.9

W

ILEAK

TMDS Channel Leakage Current

TA = 25°C

0.01

1

mA

CIN, TMDS

TMDS Channel Input Capacitance

5V_SUPPLY = 5.0 V, Measured at

1 MHz, VBIAS = 2.5 V

0.9

1.2

pF

DCIN, TMDS

TMDS Channel Input Capacitance Matching

5V_SUPPLY = 5.0 V, Measured at

1 MHz, VBIAS = 2.5 V (Note 4)

0.05

pF

CIN, DDC

Level Shifting Input Capacitance, Capacitance

to GND

5V_SUPPLY = 5.0 V, Measured at

100 kHz, VBIAS = 2.5 V (Note 2)

3.5

4

pF

CIN, CEC

Level Shifting Input Capacitance, Capacitance

to GND

5V_SUPPLY = 5.0 V, Measured at

100 kHz, VBIAS = 2.5 V

3.5

4

pF

CIN, HP

Level Shifting Input Capacitance, Capacitance

to GND

5V_SUPPLY = 5.0 V, Measured at

100 kHz, VBIAS = 2.5 V

3.5

4

pF

1. Operating Characteristics are over Standard Operating Conditions unless otherwise specified.

2. Standard IEC 61000−4−2, CDISCHARGE = 150 pF, RDISCHARGE = 330 W, 5V_SUPPLY and LV_SUPPLY within recommended operating

conditions, GND = 0 V and ESD_BYP (pin 37), 5V_OUT (pin 38), and HOTPLUG_DET_OUT (pin 20) each bypassed with a 0.1 mF ceramic

capacitor connected to GND.

3. These measurements performed with no external capacitor on ESD_BYP.

4. Intra−pair matching, each TMDS pair (i.e. D+, D−).

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