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NCV8401BDTRKG Datasheet(PDF) 2 Page - ON Semiconductor

Part # NCV8401BDTRKG
Description  Self-Protected Low Side Driver
Download  10 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCV8401BDTRKG Datasheet(HTML) 2 Page - ON Semiconductor

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NCV8401A, NCV8401B
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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage Internally Clamped
VDSS
42
V
Drain−to−Gate Voltage Internally Clamped
(RGS = 1.0 MW)
VDGR
42
V
Gate−to−Source Voltage
VGS
"14
V
Drain Current − Continuous
ID
Internally Limited
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
PD
1.1
2.0
W
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
1.6
110
60
°C/W
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 3.65 Apk, L = 120 mH, RG = 25 W, TJstart = 150°C) (Note 3)
EAS
800
mJ
Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 3.0 W, td = 400 ms)
VLD
65
V
Operating Junction Temperature
TJ
−40 to 150
°C
Storage Temperature
Tstg
−55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Minimum FR4 PCB, steady state.
2. Mounted onto a 2
″ square FR4 board
(1
″ square, 2 oz. Cu 0.06″ thick single−sided, t = steady state).
3. Not subject to production testing.
DRAIN
SOURCE
GATE
VDS
VGS
ID
IG
+
+
Figure 1. Voltage and Current Convention


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