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NCV8401A Datasheet(PDF) 3 Page - ON Semiconductor

Part # NCV8401A
Description  Self-Protected Low Side Driver
Download  10 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCV8401A Datasheet(HTML) 3 Page - ON Semiconductor

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NCV8401A, NCV8401B
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3
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
(VGS = 0 Vdc, ID = 250 mAdc, TJ = 150°C) (Note 4)
V(BR)DSS
42
42
46
44
50
50
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) (Note 4)
IDSS
1.5
6.5
5.0
mAdc
Gate Input Current
(VGS = 5.0 Vdc, VDS = 0 Vdc)
IGSSF
50
100
mAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.2 mAdc)
Threshold Temperature Coefficient
VGS(th)
1.0
1.8
5.0
2.0
Vdc
−mV/
°C
Static Drain−to−Source On−Resistance (Note 5)
(VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 25°C)
(VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 150°C) (Note 4)
RDS(on)
23
43
29
55
mW
Static Drain−to−Source On−Resistance (Note 5)
(VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 25°C)
(VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 150°C) (Note 4)
RDS(on)
28
50
34
60
mW
Source−Drain Forward On Voltage
(IS = 5 A, VGS = 0 V)
VSD
0.80
1.1
V
SWITCHING CHARACTERISTICS (Note 4)
Turn−ON Time (10% VIN to 90% ID)
VIN = 0 V to 5 V, VDD = 25 V
ID = 1.0 A, Ext RG = 2.5 W
tON
41
50
ms
Turn−OFF Time (90% VIN to 10% ID)
tOFF
129
150
Turn−ON Time (10% VIN to 90% ID)
VIN = 0 V to 10 V, VDD = 25 V,
ID = 1.0 A, Ext RG = 2.5 W
tON
16
25
Turn−OFF Time (90% VIN to 10% ID)
tOFF
164
180
Slew−Rate ON (80% VDS to 50% VDS)
Vin = 0 to 10 V, VDD = 12 V,
RL = 4.7 W
−dVDS/dtON
1.27
2.0
V
/ms
Slew−Rate OFF (50% VDS to 80% VDS)
dVDS/dtOFF
0.36
0.75
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Current Limit
VGS = 5.0 V, VDS = 10 V
VGS = 5.0 V, TJ = 150°C (Note 4)
ILIM
25
11
30
16
35
21
Adc
VGS = 10 V, VDS = 10 V
VGS = 10 V, TJ = 150°C (Note 4)
30
18
35
25
40
28
Temperature Limit (Turn−off)
VGS = 5.0 V (Note 4)
TLIM(off)
150
175
200
°C
Thermal Hysteresis
VGS = 5.0 V
DTLIM(on)
15
°C
Temperature Limit (Turn−off)
VGS = 10 V (Note 4)
TLIM(off)
150
165
185
°C
Thermal Hysteresis
VGS = 10 V
DTLIM(on)
15
°C
GATE INPUT CHARACTERISTICS (Note 4)
Device ON Gate Input Current
VGS = 5 V ID = 1.0 A
IGON
50
100
mA
VGS = 10 V ID = 1.0 A
400
700
Current Limit Gate Input Current
VGS = 5 V, VDS = 10 V
IGCL
0.1
0.5
mA
VGS = 10 V, VDS = 10 V
0.7
1.0
Thermal Limit Fault Gate Input Current
VGS = 5 V, VDS = 10 V
IGTL
0.6
1.0
mA
VGS = 10 V, VDS = 10 V
2.0
4.0
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4)
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
4000
400
V
4. Not subject to production testing.
5. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.


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