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MDU3603 Datasheet(PDF) 2 Page - MagnaChip Semiconductor.

Part No. MDU3603
Description  Single P-Channel Trench MOSFET, -30V, -67A, 9.1m(ohm)
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Maker  MGCHIP [MagnaChip Semiconductor.]
Homepage  http://www.magnachip.co.kr
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MDU3603 Datasheet(HTML) 2 Page - MagnaChip Semiconductor.

   
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May. 2011. Version 1.1
MagnaChip Semiconductor Ltd
.
2
Ordering Information
Part Number
Temp. Range
Package
Packing
Quantity
RoHS Status
MDU3603RH
-55~150
oC
PowerDFN56
Tape & Reel
3000 units
Halogen Free
Electrical Characteristics (Ta = 25
oC unless otherwise noted)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = -250µA, VGS = 0V
-30
-
-
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = -250µA
-1.0
-1.8
-3.0
Drain Cut-Off Current
IDSS
VDS = -30V, VGS = 0V
-
-1
µA
Gate Leakage Current
IGSS
VGS = ±25V, VDS = 0V
-
-
±0.1
Drain-Source ON Resistance
RDS(ON)
VGS = -20V, ID = -12A
-
6.4
7.5
m
VGS = -10V, ID = -12A
-
7.5
9.1
VGS = -5V, ID = -10A
10.8
13.6
Forward Transconductance
gFS
VDS = -5V, ID = -10A
34
-
S
Dynamic Characteristics
Total Gate Charge
Qg
VDS = -15V, ID = -12A
VGS = -10V
-
38.4
-
nC
Gate-Source Charge
Qgs
-
5.9
-
Gate-Drain Charge
Qgd
-
8.2
-
Input Capacitance
Ciss
VDS = -15V, VGS = 0V,
f = 1.0MHz
-
1788
-
pF
Reverse Transfer Capacitance
Crss
-
268
-
Output Capacitance
Coss
-
445
-
Turn-On Delay Time
td(on)
VGS = -10V ,VDS = -15V,
RL = 1.25 , RGEN = 3
-
15.3
-
ns
Turn-On Rise Time
tr
-
13.0
-
Turn-Off Delay Time
td(off)
-
61.6
-
Turn-Off Fall Time
tf
-
53.2
-
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
VSD
IS = -1A, VGS = 0V
-
-0.71
-1.0
V
Body Diode Reverse Recovery Time
trr
IF = -12A, di/dt = 100A/µs
-
42.3
ns
Body Diode Reverse Recovery Charge
Qrr
-
40.7
-
nC
Note :
1.
Surface mounted FR-4 board by JEDEC (jesd51-7)
2.
Starting TJ=25°C, L=1mH, IAS= -15A VDD=-20V, VGS=-10V.


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