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CM1216 Datasheet(PDF) 4 Page - ON Semiconductor

Part # CM1216
Description  6 and 8-Channel Low Capacitance ESD Arrays
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CM1216 Datasheet(HTML) 4 Page - ON Semiconductor

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CM1216
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4
APPLICATION INFORMATION
Design Considerations
In order to realize the maximum protection against ESD pulses, care must be taken in the PCB layout to minimize parasitic
series inductances on the Supply/Ground rails as well as the signal trace segment between the signal input (typically
a connector) and the ESD protection device. Refer to Application of Positive ESD Pulse between Input Channel and Ground,
which illustrates an example of a positive ESD pulse striking an input channel. The parasitic series inductance back to the power
supply is represented by L1 and L2. The voltage VCL on the line being protected is:
VCL = Fwd voltage drop of D1 + VSUPPLY + L1 x d(IESD ) / dt + L2 x d(IESD ) / dt
where IESD is the ESD current pulse, and VSUPPLY is the positive supply voltage.
An ESD current pulse can rise from zero to its peak value in a very short time. As an example, a level 4 contact discharge
per the IEC61000−4−2 standard results in a current pulse that rises from zero to 30 Amps in 1 ns. Here d(IESD)/dt can be
approximated by
DIESD/Dt, or 30/(1x10−9). So just 10 nH of series inductance (L1 and L2 combined) will lead to a 300 V
increment in VCL!
Similarly for negative ESD pulses, parasitic series inductance from the VN pin to the ground rail will lead to drastically
increased negative voltage on the line being protected.
The CM1213 has an integrated Zener diode between VP and VN. This greatly reduces the effect of supply rail inductance
L2 on VCL by clamping VP at the breakdown voltage of the Zener diode. However, for the lowest possible VCL, especially when
VP is biased at a voltage significantly below the Zener breakdown voltage, it is recommended that a 0.22 μF ceramic chip
capacitor be connected between VP and the ground plane.
As a general rule, the ESD Protection Array should be located as close as possible to the point of entry of expected
electrostatic discharges. The power supply bypass capacitor mentioned above should be as close to the VP pin of the Protection
Array as possible, with minimum PCB trace lengths to the power supply, ground planes and between the signal input and the
ESD device to minimize stray series inductance.
Additional Information
See also ON Semiconductor Application Note, “Design Considerations for ESD Protection”, in the Applications section.
POSITIVE SUPPLY
CHANNEL
INPUT
GROUND RAIL
CHASSIS GROUND
SYSTEM OR
CIRCUITRY
BEING
PROTECTED
LINE BEING
PROTECTED
ONE
CHANNEL
PATH OF ESD CURRENT PULSE (IESD)
Figure 2. Application of Positive ESD Pulse between Input Channel and Ground
C1
D1
D2
L1


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