Electronic Components Datasheet Search |
|
SKM400GB17E4 Datasheet(PDF) 1 Page - Semikron International |
|
SKM400GB17E4 Datasheet(HTML) 1 Page - Semikron International |
1 / 5 page SKM400GB17E4 © by SEMIKRON Rev. 6 – 19.03.2015 1 SEMITRANS® 3 GB IGBT4 Modules SKM400GB17E4 Features • IGBT4 = 4. generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4. Generation CAL-Diode • Insulated copper baseplate using DBC Technology (Direct Copper Bonding) • With integrated Gate resistor • For switching frequenzies up to 8kHz • UL recognized, file no. E63532 Typical Applications* •AC inverter drives •UPS • Electronic welders • Public transport •Wind power Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1700 V IC Tj = 175 °C Tc =25 °C 614 A Tc =80 °C 474 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V tpsc VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V Tj =150 °C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc =25 °C 443 A Tc =80 °C 327 A IFnom 400 A IFRM IFRM = 2xIFnom 800 A IFSM tp = 10 ms, sin 180°, Tj =25°C 2340 A Tj -40 ... 175 °C Module It(RMS) 500 A Tstg -40 ... 125 °C Visol AC sinus 50 Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =400 A VGE =15 V chiplevel Tj =25 °C 1.90 2.20 V Tj =150 °C 2.30 2.60 V VCE0 chiplevel Tj =25 °C 0.8 0.9 V Tj =150 °C 0.7 0.8 V rCE VGE =15 V chiplevel Tj =25 °C 2.75 3.25 mΩ Tj =150 °C 4.00 4.50 mΩ VGE(th) VGE=VCE, IC = 16 mA 5.2 5.8 6.4 V ICES VGE =0 V VCE = 1700 V Tj =25 °C 5mA Tj =150 °C mA Cies VCE =25V VGE =0 V f=1MHz 36 nF Coes f=1MHz 1.36 nF Cres f=1MHz 1.16 nF QG VGE = - 8 V...+ 15 V 3200 nC RGint Tj =25°C 1.9 Ω td(on) VCC = 1200 V IC =400 A VGE = +15/-15 V RG on =2 Ω RG off =1 Ω di/dton = 10000 A/ µs di/dtoff =2300 A/µs du/dt = 5600 V/µs Tj =150 °C 280 ns tr Tj =150 °C 45 ns Eon Tj =150 °C 156.5 mJ td(off) Tj =150 °C 760 ns tf Tj =150 °C 140 ns Eoff Tj =150 °C 180 mJ Rth(j-c) per IGBT 0.066 K/W |
Similar Part No. - SKM400GB17E4 |
|
Similar Description - SKM400GB17E4 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |