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SKM25GD125D Datasheet(PDF) 2 Page - Semikron International

Part # SKM25GD125D
Description  IGBT modules
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Manufacturer  SEMIKRON [Semikron International]
Direct Link  http://www.semikron.com
Logo SEMIKRON - Semikron International

SKM25GD125D Datasheet(HTML) 2 Page - Semikron International

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SKM25GD125D
2
Rev. 1 – 05.12.2012
© by SEMIKRON
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Inverse diode
VF = VEC
IF =40A
VGE =0 V
chiplevel
Tj =25 °C
2.13
2.65
V
Tj =125 °C
1.94
2.46
V
VF0
chiplevel
Tj =25 °C
1.1
1.45
V
Tj =125 °C
0.85
1.2
V
rF
chiplevel
Tj =25 °C
25.7
30.0
m
Tj =125 °C
27.1
31.4
m
IRRM
IF =25A
di/dtoff =2500 A/µs
VGE =±15 V
VCC = 600 V
Tj =125 °C
50
A
Qrr
Tj =125 °C
4µC
Err
Tj =125 °C
1.1
mJ
Rth(j-c)
per diode
1
K/W
Module
LCE
60
nH
RCC'+EE'
terminal-chip
TC =25°C
m
TC =125 °C
m
Rth(c-s)
per module
0.05
K/W
Ms
to heat sink M6
4
5
Nm
Mt
Nm
Nm
w
175
g
SEMITRANS® 6
GD
IGBT modules
SKM25GD125D
Target Data
Features
•VCE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
Typical Applications*
• Three phase inverters for AC motor
speed control
• Pulse frequencies also above 15 kHz
• DC servo and robot drives


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