NTD3055-150-1G datasheet(4/7 Pages) ONSEMI

Part #	NTD3055-150-1G

Description	Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NTD3055−150, NVD3055−150

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4

VGS

VDS

4

10

6

0

12

4

10

320

20

10

0

Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage versus Total Charge

1

100

10

100

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

RG, GATE RESISTANCE (W)

Figure 10. Diode Forward Voltage versus

Current

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

560

01

6

0.6

0.92

0.84

0.76

0.68

1

6

2

0

8

10

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

160

240

400

25

2

ID = 9 A

TJ = 25°C

Q2

Q1

VGS

QT

VDS = 30 V

ID = 9 A

VGS = 10 V

tr

td(off)

td(on)

tf

VGS = 0 V

TJ = 25°C

VGS = 0 V

VDS = 0 V

TJ = 25°C

Crss

Ciss

Coss

Crss

Ciss

23

45

80

480

15

5

78

8

16

0.1

100

10

100

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

TJ, STARTING JUNCTION TEMPERATURE (°C)

25

125

100

75

50

24

8

0

32

VGS = 20 V

SINGLE PULSE

TC = 25°C

ID = 7.75 A

175

150

1

10

1

0.1

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

10 ms

10

ms

1 ms

dc

100

ms

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NTD3055-150-1G Datasheet(PDF) 4 Page - ON Semiconductor

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