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NCV8406A Datasheet(PDF) 6 Page - ON Semiconductor |
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NCV8406A Datasheet(HTML) 6 Page - ON Semiconductor |
6 / 12 page NCV8406A, NCV8406B www.onsemi.com 6 TYPICAL PERFORMANCE CURVES Figure 14. Normalized Threshold Voltage vs. Temperature Figure 15. Source−Drain Diode Forward Characteristics T ( °C) IS (A) 140 100 60 40 20 0 −20 −40 0.6 0.7 0.8 0.9 1.0 1.1 1.2 8 7 6 5 4 3 2 1 500 600 700 800 1000 1100 80 120 9 10 −40 °C 25 °C 100 °C 150 °C Figure 16. Resistive Load Switching Time vs. Gate−Source Voltage VGS (V) 10 9 8 7 6 5 4 3 0 200 600 1000 1600 td(off) td(on) tf tr ID = 150 mA VDS = VGS 1200 VGS = 0 V VDD = 13.8 V ID = 2 A RG = 0 W 900 400 800 1400 Figure 17. Resistive Load Switching Time vs. Gate Resistance RG (W) 2000 1500 1000 500 0 −200 200 1400 3000 3400 td(on), VGS = 5 V td(off), VGS = 5 V tr, VGS = 5 V tf, VGS = 5 V td(on), VGS = 10 V td(off), VGS = 10 V tr, VGS = 10 V tf, VGS = 10 V 2600 2200 1800 1000 600 Figure 18. Drain−Source Voltage Slope during Turn On and Turn Off vs. Gate Resistance RG (W) 2000 1500 1000 500 0 5 10 15 25 35 20 30 dVDS/dt(off), VGS = 5 V dVDS/dt(off), VGS = 10 V |
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