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K4G323222A Datasheet(PDF) 2 Page - Samsung semiconductor |
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K4G323222A Datasheet(HTML) 2 Page - Samsung semiconductor |
2 / 49 page K4G323222A CMOS SGRAM - 2 - Rev. 1.3 (Dec. 2000) Revision History Revision 1.3 (December 12, 2000) • Removed WPB(Write Per Bit) function. Revision 1.2 (August 1, 2000) • Removed K4G323222A-40 • Changed tSH of K4G323222A from 0.7ns to 1.0ns Revision 1.1 (June 27, 2000) • Changed ICC5 of K4G323222A-40/45/50/60/70 :Refer to "DC Characteristics table" on page 6. Revision 1.0 (June 07, 2000) • Removed K4G323222A-55 and add K4G323222A-70 Revision 0.3 (March 06, 2000) • For -60/70 devices, tRDL can be programmed as 1CLK if Auto-Precharge is not used in the design • Changed tCH/tCL of K4G323222A-60 from 2ns to 2.5ns Revision 0.0 (January 14, 2000) - Target Spec • Define target spec |
Similar Part No. - K4G323222A |
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Similar Description - K4G323222A |
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