IXFH24N50Q datasheet(1/4 Pages) IXYS | HiPerFET Power MOSFETs

Part No.	IXFH24N50Q

Description	HiPerFET Power MOSFETs

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

500

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C

24N50

24

A

26N50

26

A

I

DM

T

C

= 25

°C, Note 1

24N50

96

A

26N50

104

A

I

AR

T

C

= 25

°C

24N50

24

A

26N50

26

A

E

AR

T

C

= 25

°C

30

mJ

E

AS

T

C

= 25

°C

1.5

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

300

W

T

J

-55 ... +150

° C

T

JM

150

° C

T

stg

-55 ... +150

° C

T

L

1.6 mm (0.063 in) from case for 10 s

300

° C

M

d

Mounting torque

1.13/10

Nm/lb.in.

Weight

TO-247

6

g

TO-268

4

g

N-Channel Enhancement Mode

Avalanche Rated, Low Q

g, High dv/dt

Features

l IXYS advanced low Q

g process

l Internationalstandardpackages

l Low R

DS (on)

l Unclamped Inductive Switching (UIS)

rated

l Fast switching

l Molding epoxies meet UL 94 V-0

flammability classification

Advantages

l Easy to mount

l Space savings

l High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS

= 0 V, I

D = 250 µA

500

V

GS(th)

V

DS = VGS, ID = 4 mA

2.5

4.5

V

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±100

nA

I

DSS

V

DS

= V

DSS

T

J =

25

°C25

µA

V

GS

= 0 V

T

J = 125°C1

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

24N50Q

0.23

Ω

Note 2

26N50Q

0.20

Ω

98512G (5/01)

HiPerFETTM

Power MOSFETs

Q-Class

TO-247 AD (IXFH)

(TAB)

G = Gate,D = Drain,

S = Source,TAB = Drain

TO-268 (D3) (IXFT) Case Style

(TAB)

G

S

V

DSS

I

D25

R

DS(on)

IXFH/IXFT 24N50Q

500 V

24 A

0.23

Ω

IXFH/IXFT 26N50Q

500 V

26 A

0.20

Ω

t

rr ≤

≤≤≤≤ 250 ns

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