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IXFH24N50Q Datasheet(PDF) 4 Page - IXYS Corporation

Part No. IXFH24N50Q
Description  HiPerFET Power MOSFETs
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFH24N50Q Datasheet(HTML) 4 Page - IXYS Corporation

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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
V
SD - Volts
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
5
10
15
20
25
30
35
40
45
50
Pulse Width - Seconds
10-5
10-4
10-3
10-2
10-1
100
101
0.00
0.01
0.10
1.00
V
DS - Volts
0
5
10
15
20
25
30
35
40
100
1000
10000
Gate Charge - nC
0
204060
80
100
120
0
2
4
6
8
10
12
Crss
Coss
Ciss
V
DS = 250 V
I
D = 13 A
I
G = 10 mA
f = 1MHz
T
J = 125
OC
Single Pulse
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
T
J = 25
OC
Fig.7 Gate Charge Characteristic Curve
Fig.8
Capacitance Curves
Fig.9 Drain Current vs Drain to Source Voltage
Fig.10 Transient Thermal Impedance
IXFH 24N50Q
IXFT 24N50Q
IXFH 26N50Q
IXFT 26N50Q


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