MDHT7N25URH datasheet(1/7 Pages) MGCHIP

Part #	MDHT7N25URH

Description	N-Channel MOSFET 250V, 1.4A, 0.55(ohm))

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

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Mar. 2016 Version 1.1

MagnaChip Semiconductor Ltd.

1

Absolute Maximum Ratings (Ta = 25

oC)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

250

V

Gate-Source Voltage

VGSS

±30

V

Continuous Drain Current

TC=25

oC

ID

1.4

A

TC=100

oC

0.89

A

Pulsed Drain Current

(1)

IDM

5.2

A

Power Dissipation

TC=25

oC

PD

2.5

W

Derate above 25

oC

0.02

W/

oC

Peak Diode Recovery dv/dt

(3)

dv/dt

5.5

V/ns

Repetitive Pulse Avalanche Energy

(4)

EAR

0.25

mJ

Avalanche current

(1)

IAR

1.4

A

Single Pulse Avalanche Energy

(4)

EAS

115

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~150

oC

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient

(1)

RθJA

50

oC/W

*When mounted on the minimum pad size recommended (PCB Mount)

G

MDHT7N25

N-Channel MOSFET 250V, 1.4A, 0.55

Ω

General Description

The MDHT7N25 uses advanced Magnachip

’s

MOSFET Technology, which provides low on-state

resistance, high switching performance and

excellent quality.

MDHT7N25 is suitable device for SMPS, HID and

general purpose applications.

Features

 VDS = 250V

 ID =

1.4A

 RDS(ON) ≤ 0.55Ω

@VGS = 10V

Applications

 Power Supply

 PFC

 LED TV

S

D

SOT-223

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MDHT7N25URH Datasheet(PDF) 1 Page - MagnaChip Semiconductor.

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