MDHT4N20YURH datasheet(2/6 Pages) MGCHIP

Part #	MDHT4N20YURH

Description	N-Channel MOSFET 200V, 0.85A, 1.35(ohm)

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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2 / 6 page

Oct 2011 Version 1.0

MagnaChip Semiconductor Ltd.

2

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDHT4N20YURH

-55~150

oC

SOT-223

Reel and Tape

Halogen Free

Electrical Characteristics (Ta =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

200

-

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

1.0

-

2.0

Drain Cut-Off Current

IDSS

VDS = 200V, VGS = 0V

-

1

μA

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

-

100

nA

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 0.425A

-

1.1

1.35

Ω

Forward Transconductance

gfs

VDS = 30V, ID = 0.425A

-

1.3

-

S

Dynamic Characteristics

Total Gate Charge

Qg

VDS = 160V, ID = 3.8A, VGS = 5V

-

3.2

-

nC

Gate-Source Charge

Qgs

-

0.64

-

Gate-Drain Charge

Qgd

-

1.6

-

Input Capacitance

Ciss

VDS = 25V, VGS = 0V, f = 1.0MHz

-

148

-

pF

Reverse Transfer Capacitance

Crss

-

11.3

-

Output Capacitance

Coss

-

42.7

-

Turn-On

Delay Time

td(on)

VGS = 5V, VDS = 100V, ID = 3.8A,

RG = 25Ω

-

6

-

ns

Rise Time

tr

-

38

-

Turn-Off Delay Time

td(off)

-

11

-

Fall Time

tf

-

13

-

Drain-Source Body Diode Characteristics

Maximum Continuous Drain to Source

Diode Forward Current

IS

-

0.85

-

A

Source-Drain Diode Forward Voltage

VSD

IS = 0.85A, VGS = 0V

-

1.5

V

Body Diode Reverse Recovery Time

trr

IF = 3.8A, dl/dt = 100A/μs

(3)

-

90

-

ns

Body Diode Reverse Recovery Charge

Qrr

-

0.24

-

μC

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.

2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.

3.

ISD ≤3.8A, di/dt≤300A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C

4. L=108mH,

IAS=0.85A, VDD=50V, Rg =25Ω, Starting TJ=25°C

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