IXDP35N60B datasheet(4/4 Pages) IXYS

Part #	IXDP35N60B

Description	IGBT with optional Diode

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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IXDP 35N60 B

IXDH 35N60 B

IXDH 35N60 BD1

Fig. 7 Typ. turn on energy and switching

Fig. 8 Typ. turn off energy and switching

times versus collector current

Fig. 9 Typ. turn on energy and switching

Fig.10 Typ. turn off energy and switching

times versus gate resistor

Fig. 11 Reverse biased safe operating area

Fig. 12 Typ. transient thermal impedance

RBSOA

10

20

30

40

50

60

0

1

2

3

4

0

20

40

60

80

10

20

30

40

50

60

0.0

0.5

1.0

1.5

2.0

0

100

200

300

400

10-5

10-4

10-3

10-2

10-1

100

101

0.001

0.01

0.1

1

0

5

10

15

20

25

30

35

40

0.0

0.5

1.0

1.5

2.0

0

200

400

600

800

0

5

10

15

20

25

30

35

40

0.0

0.5

1.0

1.5

2.0

0

15

30

45

60

single pulse

V

CE = 300V

V

GE = ±15V

R

G = 10W

T

J = 125°C

IXDH30N60B

V

CE = 300V

V

GE = ±15V

I

C

= 35A

T

J = 125°C

0

100

200

300

400

500

600

700

0

20

40

60

80

100

120

R

G = 10 W

T

J = 125°C

V

CE = 300V

V

GE = ±15V

R

G = 10W

T

J = 125°C

E

on

V

CE = 300V

V

GE = ±15V

I

C

= 35A

T

J = 125°C

t

d(on)

t

r

E

off

t

d(off)

t

f

E

on

t

d(on)

t

r

E

off

t

d(off)

t

f

I

C

A

I

C

A

E

off

E

on

t

R

G

W

R

G

W

V

CE

t

s

mJ

E

on

mJ

E

off

ns

t

ns

t

I

CM

K/W

Z

thJC

IGBT

diode

V

A

mJ

ns

mJ

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