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MDF5N50TH Datasheet(PDF) 1 Page - MagnaChip Semiconductor. |
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MDF5N50TH Datasheet(HTML) 1 Page - MagnaChip Semiconductor. |
1 / 6 page Oct 2014. Version 1.3 MagnaChip Semiconductor Ltd. 1 Absolute Maximum Ratings (Ta = 25 oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (※) TC=25 oC ID 5.0 A TC=100 oC 3.2 A Pulsed Drain Current (1) IDM 20 A Power Dissipation TC=25 oC PD 27 W W/ oC Derate above 25 oC 0.22 Peak Diode Recovery dv/dt (3) Dv/dt 4.5 V/ns Single Pulse Avalanche Energy (4) EAS 230 mJ Junction and Storage Temperature Range TJ, Tstg -55~150 oC ※ Id limited by maximum junction temperature Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) RθJA 62.5 oC/W Thermal Resistance, Junction-to-Case (1) RθJC 4.6 MDF5N50 N-Channel MOSFET 500V, 5.0 A, 1.4Ω General Description The MDF5N50 uses advanced MagnaCh ip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF5N50 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V ID = 5.0A @ VGS = 10V RDS(ON) ≤ 1.4Ω @ VGS = 10V Applications Power Supply PFC Ballast S D G |
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