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IRFU330 Datasheet(PDF) 1 Page - International Rectifier

Part No. IRFU330
Description  HEXFET Power MOSFET
Download  10 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFU330 Datasheet(HTML) 1 Page - International Rectifier

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IRFR/U3303
HEXFET® Power MOSFET
VDSS = 30V
RDS(on) = 0.031Ω
ID = 33A
…
8/25/97
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
2.2
RθJA
Junction-to-Ambient (PCB mount)**
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
Thermal Resistance
D - P a k
TO - 2 52 A A
I- P a k
TO - 251A A
l Ultra Low On-Resistance
l Surface Mount (IRFR3303)
l Straight Lead (IRFU3033)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
Description
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
33
…
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
21
…
A
IDM
Pulsed Drain Current

120
PD @TC = 25°C
Power Dissipation
57
W
Linear Derating Factor
0.45
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
95
mJ
IAR
Avalanche Current

18
A
EAR
Repetitive Avalanche Energy

5.7
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
S
D
G
PD - 9.1642A


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