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GLT725608 Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers

Part No. GLT725608
Description  Ultra High Performance 32K x 8 Bit CMOS STATIC RAM
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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GLT725608 Datasheet(HTML) 3 Page - List of Unclassifed Manufacturers

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G -LINK
GLT725608
Ultra High Performance 32K x 8 Bit CMOS STATIC RAM
Feb, 2001(Rev.2.4)
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
6F, No. 24-2, Industry E, RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
- 3 -
DC Characteristics
Sym.
Parameter
Test Conditions
Min. Typ
(1)
Max.
Unit
VIL
Guaranteed Input Low
Voltage
(2)
-0.3
-
+0.8
V
VIH
Guaranteed Input High
Voltage
(2)
2.2
-
VCC+0.3
V
ILI
Input Leakage Current
VCC= Max., VIN=0V to VCC
-5
-
5
µA
ILO
Output Leakage Current
VCC= Max., CE
≥V
IH
-5
-
5
µA
VOL
Output Low Voltage
VCC= Min., IOL =8mA
-
-
0.4
V
VOH
Output High Voltage
VCC= Min., IOH =-4mA
2.4
-
-
V
ICC
Operating Power Supply
Current
VCC= Max., CE
≤V
IL,
II/O=0mA., F= Fmax
(3)
-
-
-12 -15 -20
160 150 120
mA
ICCSB Standby Power Supply
Current
VCC= Max., CE
≥V
IH,
II/O=0mA., F= Fmax
(3)
-
-
40 30 20
mA
ICCSB1 Power Down Power
Supply Current
VCC= Max., CE
≥V
CC.-0.2V,
VIN
≥V
CC. -0.2V or
-
-
10 10 10
mA
1. Typical characteristics are at VCC=5V, TA=25
2. These are absolute values with reject to device ground and all overshoots due to system or
tester noise are included.
3. FMAX=1/tRC.
Data Retention
Sym.
Parameter
Test Conditions
Min.
Typ
(1)
Max.
Unit
VDR
VCC for Data retention
CE
≥ V
CC -0.2V,
VIN
≥ V
CC -0.2V or VIN
≤ 0.2V
2.0
-
5.5
V
ICCDR
(1) Data Retention Current
VDR=2.0V
-
30
µA
VDR=3.0V
50
µA
tCDR
Chip Deselect to Data
Retention Time
See Retention Waveform
0
-
-
ns
tR
Operating Recovery Time
tRC
(2)
-
-
ns
1. CE
≥ V
DR -0.2V, VIN
≥ V
DR -0.2V or VIN
≤ 0.2V.
2. tRC =Read Cycle Time.


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