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TPS53355 Datasheet(PDF) 6 Page - Texas Instruments |
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TPS53355 Datasheet(HTML) 6 Page - Texas Instruments |
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6 / 39 page  6 TPS53355 SLUSAE5D – AUGUST 2011 – REVISED NOVEMBER 2016 www.ti.com Product Folder Links: TPS53355 Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Infomation THERMAL METRIC(1) TPS53355 UNIT DQP VQP 22 PINS 22 PINS θJA Junction-to-ambient thermal resistance 27.2 27.2 °C/W θJCtop Junction-to-case (top) thermal resistance 17.1 17.1 θJB Junction-to-board thermal resistance 5.9 5.9 ψJT Junction-to-top characterization parameter 0.8 0.8 ψJB Junction-to-board characterization parameter 5.8 5.8 θJCbot Junction-to-case (bottom) thermal resistance 1.2 1.2 (1) Ensured by design. Not production tested. 6.5 Electrical Characteristics Over recommended free-air temperature range, VVDD= 12 V (unless otherwise noted) PARAMETER CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENT VVIN VIN pin power conversion input voltage 1.5 15 V VVDD Supply input voltage 4.5 25.0 V IVIN(leak) VIN pin leakage current VEN = 0 V 1 µA IVDD VDD supply current TA = 25°C, No load, VEN = 5 V, VVFB = 0.630 V 420 590 µA IVDDSDN VDD shutdown current TA = 25°C, No load, VEN = 0 V 10 µA INTERNAL REFERENCE VOLTAGE VVFB VFB regulation voltage CCM condition(1) 0.600 V VVFB VFB regulation voltage TA = 25°C 0.597 0.600 0.603 V 0°C ≤ TA ≤ 85°C 0.5952 0.600 0.6048 –40°C ≤ TA ≤ 85°C 0.594 0.600 0.606 IVFB VFB input current VVFB = 0.630 V, TA = 25°C 0.01 0.20 µA LDO OUTPUT VVREG LDO output voltage 0 mA ≤ IVREG ≤ 30 mA 4.77 5.00 5.36 V IVREG LDO output current(1) Maximum current allowed from LDO 30 mA VDO Low drop out voltage VVDD = 4.5 V, IVREG = 30 mA 230 mV BOOT STRAP SWITCH VFBST Forward voltage VVREG-VBST, IF = 10 mA, TA = 25°C 0.1 0.2 V IVBSTLK VBST leakage current VVBST = 23 V, VSW = 17 V, TA = 25°C 0.01 1.50 µA DUTY AND FREQUENCY CONTROL tOFF(min) Minimum off time TA = 25°C 150 260 400 ns tON(min) Minimum on time VIN = 17 V, VOUT = 0.6 V, RRF = 39 kΩ, TA = 25 °C (1) 35 ns SOFT START tSS Internal soft-start time from VOUT = 0 V to 95% of VOUT RMODE = 39 kΩ 0.7 ms RMODE = 100 kΩ 1.4 RMODE = 200 kΩ 2.8 RMODE = 470 kΩ 5.6 INTERNAL MOSFETS RDS(on)H High-side MOSFET on-resistance TA = 25°C 5.0 mΩ RDS(on)L Low-side MOSFET on-resistance TA = 25°C 2.0 mΩ |
Similar Part No. - TPS53355_17 |
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Similar Description - TPS53355_17 |
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