VIN

VBST1

TPS51225C

DRVH1

SW1

DRVL1

VO1

VFB1

CS1

EN1

EN 5 V

VCLK

VREG5

5.5 V to 24 V

5 V

15 V

VBST2

DRVH 2

SW2

DRVL2

VFB2

CS2

EN2

PGOOD

VREG3

EN 3.3 V

3.3 V

PGOOD

3.3-V Always ON

UDG-12001

1 mF

1 mF

5 V

Always ON

VIN

VBST1

TPS51225

TPS51225 B

DRVH1

SW1

DRVL1

VO1

VFB1

CS1

EN1

EN-5V

VCLK

VREG5

5.5 V to 24 V

5 V

15 V

VBST2

DRVH 2

SW2

DRVL2

VFB2

CS2

EN2

PGOOD

VREG3

EN 3.3 V

3.3 V

PGOOD

3.3-V Always ON

UDG-11182

1 mF

5 V

1 mF

TPS51225, TPS51225B, TPS51225C

SLUSAV0B – JANUARY 2012 – REVISED SEPTEMBER 2012

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

TYPICAL APPLICATION DIAGRAM (TPS51225/TPS51225B)

TYPICAL APPLICATION DIAGRAM (TPS51225C)

2

Submit Documentation Feedback

Copyright © 2012, Texas Instruments Incorporated

Product Folder Links :TPS51225 TPS51225B TPS51225C