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NVMFS5C423NLWFT3G Datasheet(PDF) 4 Page - ON Semiconductor

Part # NVMFS5C423NLWFT3G
Description  Power MOSFET
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NVMFS5C423NLWFT3G Datasheet(HTML) 4 Page - ON Semiconductor

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NVMFS5C423NL
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4
TYPICAL CHARACTERISTICS
10
100
1000
10000
0
10
203040
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
48
40
32
24
8
4
0
0
2
4
6
8
10
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100
10
1
1
10
100
1000
VGS = 0 V
TJ = 25°C
f = 1 MHz
CISS
COSS
CRSS
0
10
15
20
25
30
5
VDS = 20 V
TJ = 25°C
ID = 50 A
QT
QGS
QGD
VGS = 4.5 V
VDD = 20 V
ID = 50 A
td(off)
td(on)
tf
tr
TJ = 125°C
TJ = 25°C
TJ = −55°C
12
16 20
28
36
44
1.0
10.0
100.0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
VDS (V)
TIME IN AVALANCHE (s)
100
10
1
0.1
1
10
100
1000
1
10
TJ(initial) = 100°C
TJ(initial) = 25°C
1E−04
1E−02
RDS(on) Limit
Thermal Limit
Package Limit
dc
0.01 ms
0.1 ms
1 ms
10 ms
TC = 25°C
VGS ≤ 10 V
1E−03
100


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