NVMFS5C612NLWFAFT1G datasheet(4/6 Pages) ONSEMI

Part #	NVMFS5C612NLWFAFT1G

Description	Power MOSFET

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NVMFS5C612NL

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TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

QG, TOTAL GATE CHARGE (nC)

60

50

40

30

20

10

0

1000

3000

4000

5000

6000

7000

70

60

50

40

30

20

10

0

2

4

6

8

10

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

100

10

1

10

100

1000

0.9

0.8

1.0

0.7

0.6

0.5

0.4

0.3

1

6

16

21

26

36

41

Figure 11. Safe Operating Area

Figure 12. IPEAK vs. Time in Avalanche

VDS (V)

TIME IN AVALANCHE (s)

100

10

1

0.1

1

10

100

1000

1E−04

1

10

100

VGS = 0 V

TJ = 25°C

f = 1 MHz

CISS

COSS

CRSS

80

0

10

15

20

25

30

5

VDS = 30 V

TJ = 25°C

ID = 50 A

QT

QGS

QGD

VGS = 4.5 V

VDD = 30 V

ID = 50 A

td(off)

td(on)

tf

tr

TJ = 125°C

TJ = 25°C

TJ = −55°C

11

31

46

TJ(initial) = 100°C

TJ(initial) = 25°C

1E−03

1E−02

RDS(on) Limit

Thermal Limit

Package Limit

dc

0.01 ms

0.1 ms

1 ms

10 ms

TC = 25°C

VGS ≤ 10 V

2000

8000

90

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