NVMFS5C450NL

www.onsemi.com

2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

40

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

1.6

mV/°C

Zero Gate Voltage Drain Current

10

mA

250

Gate−to−Source Leakage Current

100

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

1.2

2.0

V

Threshold Temperature Coefficient

−5.3

mV/°C

Drain−to−Source On Resistance

3.5

4.4

mW

2.3

2.8

Forward Transconductance

120

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

2100

pF

Output Capacitance

1000

Reverse Transfer Capacitance

42

Total Gate Charge

16

nC

Total Gate Charge

35

nC

Threshold Gate Charge

4

nC

Gate−to−Source Charge

7

Gate−to−Drain Charge

5

Plateau Voltage

3.2

V

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

11

ns

Rise Time

110

Turn−Off Delay Time

21

Fall Time

5

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.84

1.2

V

0.72

Reverse Recovery Time

41

ns

Charge Time

19

Discharge Time

22

Reverse Recovery Charge

31

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.