NVD6820NL datasheet(3/6 Pages) ONSEMI

Part #	NVD6820NL

Description	Power MOSFET

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NVD6820NL

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE (V)

VGS, GATE−TO−SOURCE VOLTAGE (V)

5

4

3

2

1

0

20

40

60

100

4.0

3.5

3.0

2.5

2.0

0

20

40

60

100

Figure 3. On−Resistance vs. Gate Voltage

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

10

8

6

4

2

0.010

0.011

0.012

0.013

0.014

0.015

70

40

20

10

0.010

0.011

0.012

0.013

0.014

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C)

VDS, DRAIN−TO−SOURCE (V)

150

125

100

50

25

0

−25

−50

0.4

1.0

1.6

2.2

2.8

90

70

60

50

40

30

20

10

1 k

10 k

100 k

30

50

60

80

75

175

80

VGS = 10 V

TJ = 25°C

4.5 V

3.8 V

3.6 V

3.4 V

3.2 V

3.0 V

2.8 V

VDS ≥ 10 V

TJ = 25°C

TJ = 125°C

TJ = −55°C

ID = 20 A

TJ = 25°C

VGS = 10 V

VGS = 4.5 V

ID = 20 A

VGS = 10 V

VGS = 0 V

TJ = 125°C

TJ = 150°C

0.016

0.018

80

0.017

0.015

0.016

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