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NVD5490NL Datasheet(PDF) 4 Page - ON Semiconductor

Part # NVD5490NL
Description  Power MOSFET
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NVD5490NL Datasheet(HTML) 4 Page - ON Semiconductor

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NVD5490NL
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Qgs
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
40
30
20
10
0
0
200
400
600
800
15
10
5
0
0
2
4
6
8
10
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100
10
1
1
10
100
1000
1.5
1.0
0.5
0
0
5
10
15
20
25
30
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
100
10
1
0.1
0.001
0.01
0.1
1
10
100
175
150
125
100
75
50
25
0
5
10
15
20
25
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
VDS = 48 V
ID = 9 A
TJ = 25°C
QT
Qgd
VDD = 48 V
ID = 9 A
VGS = 4.5 V
tr
tf
td(off)
td(on)
VGS = 0 V
TJ = 25°C
VGS = 10 V
Single Pulse
TC = 25°C
10
mS
100
mS
1 mS
10 mS
dc
RDS(on) Limit
Thermal Limit
Package Limit
ID = 17 A


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