NVD5C632NL

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2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

60

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

24

mV/

°C

Zero Gate Voltage Drain Current

10

mA

250

Gate−to−Source Leakage Current

100

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

1.2

2.1

V

Negative Threshold Temperature Coefficient

5.8

mV/

°C

Drain−to−Source On Resistance

2.1

2.5

m

W

2.7

3.4

Forward Transconductance

185

S

CHARGES, CAPACITANCES AND GATE RESISTANCES

Input Capacitance

5700

pF

Output Capacitance

2800

Reverse Transfer Capacitance

36

Total Gate Charge

34

nC

78

Total Gate Charge

34.0

nC

Threshold Gate Charge

9.5

Gate−to−Source Charge

16.8

Gate−to−Drain Charge

6.1

Plateau Voltage

3.1

V

Gate Resistance

0.7

W

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

20

ns

Rise Time

126

Turn−Off Delay Time

65

Fall Time

121

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.8

1.2

V

0.7

Reverse Recovery Time

71

ns

Charge Time

ta

36

Discharge Time

tb

36

Reverse Recovery Charge

110

nC

4. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

5. Switching characteristics are independent of operating junction temperatures.