NTD6414AN, NVD6414AN

http://onsemi.com

2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

100

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

107

mV/

°C

Zero Gate Voltage Drain Current

1.0

mA

100

Gate−to−Source Leakage Current

"100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

2.0

4.0

V

Negative Threshold Temperature

Coefficient

8.3

mV/

°C

Drain−to−Source On−Resistance

30

37

mW

Forward Transconductance

gFS

18

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

1450

pF

Output Capacitance

230

Reverse Transfer Capacitance

95

Total Gate Charge

40

nC

Threshold Gate Charge

1.7

Gate−to−Source Charge

8.0

Gate−to−Drain Charge

20

Plateau Voltage

5.9

V

Gate Resistance

1.9

W

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

11

ns

Rise Time

52

Turn−Off Delay Time

38

Fall Time

48

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.87

1.2

V

0.76

Reverse Recovery Time

68

ns

Charge Time

51

Discharge Time

16

Reverse Recovery Charge

195

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.