NTD5414N, NVD5414N

http://onsemi.com

2

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

60

V

Drain−to−Source Breakdown Voltage Temper-

ature Coefficient

67.3

mV/

°C

Zero Gate Voltage Drain Current

1.0

mA

50

Gate−Body Leakage Current

$100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

2.0

3.2

4.0

V

Negative Threshold Temperature Coefficient

0.74

mV/

°C

Drain−to−Source On−Voltage

0.7

1.16

V

0.7

Drain−to−Source On−Resistance

28.4

37

m

W

Forward Transconductance

24

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

f = 1 MHz

800

1200

pF

Output Capacitance

165

Transfer Capacitance

75

Total Gate Charge

25

48

nC

Threshold Gate Charge

1.1

Gate−to−Source Charge

4.8

Gate−to−Drain Charge

11.3

Turn−On Delay Time

12

ns

Rise Time

58

Turn−Off Delay Time

47

Fall Time

69

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage (Note 2)

0.92

1.15

V

0.8

Reverse Recovery Time

45.7

ns

Charge Time

31.7

Discharge Time

14

Reverse Recovery Stored Charge

76

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.