NTD4856N, NVD4856N

http://onsemi.com

3

Parameter

Unit

Max

Typ

Min

Test Condition

Symbol

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

8.7

ns

Rise Time

17.5

Turn−Off Delay Time

27.2

Fall Time

4.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.87

1.2

V

0.72

Reverse Recovery Time

18.7

ns

Charge Time

9.3

Discharge Time

9.4

Reverse Recovery Charge

8.0

nC

PACKAGE PARASITIC VALUES

Source Inductance

2.49

nH

Drain Inductance, DPAK

0.0164

Drain Inductance, IPAK

1.88

Gate Inductance

3.46

Gate Resistance

0.6

W

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: pulse width

≤ 300 ms, duty cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.