NVD4810NT4G datasheet(5/7 Pages) ONSEMI

Part #	NVD4810NT4G

Description	Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NTD4810N, NVD4810N

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5

TYPICAL PERFORMANCE CURVES

Crss

10

0

10

15

25

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1000

0

VGS

VDS

2000

55

VGS = 0 V

VDS = 0 V

TJ = 25°C

Ciss

Coss

Crss

Ciss

1500

Figure 8. Gate−To−Source and Drain−To−Source

Voltage vs. Total Charge

0

0.5

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

RG, GATE RESISTANCE (OHMS)

1

10

100

1000

1

VGS = 0 V

Figure 10. Diode Forward Voltage vs. Current

100

0.6

0.7

1.0

5

10

15

tr

td(off)

td(on)

tf

10

VDD = 15 V

ID = 30 A

VGS = 11.5 V

0.8

0.9

20

30

25

TJ = 25°C

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0.1

1

100

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

0.1

1000

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

10

VGS = 20 V

SINGLE PULSE

TC = 25°C

1 ms

100 ms

10 ms

dc

10 ms

20

1

100

0

25

TJ, JUNCTION TEMPERATURE (°C)

ID = 14 A

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

50

75

175

20

60

80

100

125

100

110

150

500

40

10

50

70

90

30

0

2

0

QG, TOTAL GATE CHARGE (nC)

12

4

10

5

ID = 30 A

0 V < VGS < 11.5 V

TJ = 25°C

Q2

QT

6

8

10

1

11

3

5

7

9

1 2 3 4

6 7 8 9

111213141516171819 202122

Q1

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NVD4810NT4G Datasheet(PDF) 5 Page - ON Semiconductor

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