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TUSB1211A1ZRQ Datasheet(PDF) 8 Page - Texas Instruments |
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TUSB1211A1ZRQ Datasheet(HTML) 8 Page - Texas Instruments |
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8 / 80 page  TUSB1211 SLLSE80B – MARCH 2011 – REVISED JUNE 2015 www.ti.com 4 Specifications 4.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Main battery supply voltage Continuous 0 5.0 V The product will have negligible reliability VBAT (2) impact for pulsed voltage spikes of 5.5 V for a Main battery supply voltage pulsed 5.5 V total (cumulative over lifetime) duration of 5 milliseconds VDDIO IO supply voltage Continuous 1.98 V Where VDD represents the voltage applied to Voltage on any input except VDDIO, the power supply pin associated with the –0.3 1.0 × VDD + 0.3 V VBAT, and VBUS pads input DP or DM or ID pins short-circuited to VBUS DP, DM, ID high voltage short circuit supply, in any mode of TUSB1211 operation, 5.25 V continuously for 24 hours DP or DM or ID pins short-circuited to GND in DP, DM, ID low voltage short circuit any mode of TUSB1211 operation, 0 V continuously for 24 hours VBUS input (3) –2 20 V TA Ambient temperature –40 85 °C TJ Junction temperature –40 150 °C Tstg Storage temperature –55 125 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Section 4.3 is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) If VBAT exceeds above rating a device to drop down the voltage before applied to the device. (3) If VBUS exceeds above rating an external voltage protection on the line is mandatory between the VBUS line and the TUSB1211. 4.2 ESD Ratings VALUE UNIT Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V(ESD) Electrostatic discharge V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 4.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN TYP MAX UNIT VBAT Battery supply voltage VBAT_ACTIVE 2.7 3.6 4.8 V When VDD33 is supplied internally 3.15 Battery supply voltage for USB 2.0 compliancy VBAT_CERT V When VDD33 is shorted to VBAT (USB 2.0 certification) 3.05 externally Battery supply voltage for charger detect in 2.4 VBAT_DB VBAT_DB V “dead-battery condition” VDDIO IO supply voltage VDDIO_ACTIVE 1.62 1.8 1.95 V TA Ambient temperature range –40 85 °C TJ Junction temperature For parametric compliance –40 125 °C 8 Specifications Copyright © 2011–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: TUSB1211 |
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