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5P49V5943BdddNDGI8 Datasheet(PDF) 10 Page - Integrated Device Technology |
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5P49V5943BdddNDGI8 Datasheet(HTML) 10 Page - Integrated Device Technology |
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10 / 33 page  PROGRAMMABLE CLOCK GENERATOR 10 MARCH 3, 2017 5P49V5943 DATASHEET Table 9: Input Capacitance, LVCMOS Output Impedance, and Internal Pull-down Resistance (TA = +25 °C) Table 10: DC Electrical Characteristics Table 11: Electrical Characteristics – Differential Clock Input Parameters 1,2 (Supply Voltage VDDA, VDDD, VDDO0 = 3.3V ±5%, 2.5V ±5%, 1.8V ±5%, TA = -40°C to +85°C) 1. Guaranteed by design and characterization, not 100% tested in production. 2. Slew rate measured through ±75mV window centered around differential zero. Symbol Parameter Min Typ Max Unit CIN Input Capacitance (CLKIN, CLKINB, SD/OE, SEL1/SDA, SEL0/SCL) 37 pF Pull-down Resistor SD/OE, SEL1/SDA, SEL0/SCL, CLKIN, CLKINB, OUT0_SEL_I2CB 100 300 kΩ ROUT LVCMOS Output Driver Impedance (VDDO = 1.8V, 2.5V, 3.3V) 17 Ω Symbol Parameter Test Conditions Min Typ Max Unit Iddcore3 Core Supply Current 100 MHz on all outputs, 25 MHz REFCLK 30 34 mA LVPECL, 350 MHz, 3.3V VDDOx 42 47 mA LVPECL, 350 MHz, 2.5V VDDOx 37 42 mA LVDS, 350 MHz, 3.3V VDDOx 18 21 mA LVDS, 350 MHz, 2.5V VDDOx 17 20 mA LVDS, 350 MHz, 1.8V VDDOx 16 19 mA HCSL, 250 MHz, 3.3V VDDOx, 2 pF load 29 33 mA HCSL, 250 MHz, 2.5V VDDOx, 2 pF load 28 33 mA LVCMOS, 50 MHz, 3.3V, VDDOx 1,2 16 18 mA LVCMOS, 50 MHz, 2.5V, VDDOx 1,2 14 16 mA LVCMOS, 50 MHz, 1.8V, VDDOx 1,2 12 14 mA LVCMOS, 200 MHz, 3.3V VDDOx1 36 42 mA LVCMOS, 200 MHz, 2.5V VDDOx1,2 27 32 mA LVCMOS, 200 MHz, 1.8V VDDOx1,2 16 19 mA Iddpd Power Down Current SD asserted, I2C Programming 10 14 mA 1. Single CMOS driver active. 2. Measured into a 5” 50 Ohm trace with 2 pF load. 3. Iddcore = IddA+ IddD, no loads. Iddox Output Buffer Supply Current Symbol Parameter Test Conditions Min Typ Max Unit VIH Input High Voltage - CLKIN, CLKINBSingle-ended input 0.55 1.7 V VIL Input Low Voltage - CLKIN, CLKINB Single-ended input GND - 0.3 0.4 V VSWING Input Amplitude - CLKIN, CLKINB Peak to Peak value, single-ended 200 1200 mV dv/dt Input Slew Rate - CLKIN, CLKINB Measured differentially 0.4 8 V/ns IIL Input Leakage Low Current VIN = GND -5 5 µA IIH Input Leakage High Current VIN = 1.7V 20 µA dTIN Input Duty Cycle Measurement from differential waveform 45 55 % |
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