2V7002LT1G datasheet(1/4 Pages) ONSEMI

Part #	2V7002LT1G

Description	Small Signal MOSFET

Download	4 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

1 / 4 page

October, 2016 − Rev. 8

1

Publication Order Number:

2N7002L/D

2N7002L, 2V7002L

Small Signal MOSFET

60 V, 115 mA, N−Channel SOT−23

Features

• 2V Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable (2V7002L)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain−Source Voltage

VDSS

60

Vdc

Drain−Gate Voltage (RGS = 1.0 MW)

VDGR

60

Vdc

Drain Current

− Continuous TC = 25°C (Note 1)

− Continuous TC = 100°C (Note 1)

− Pulsed (Note 2)

ID

IDM

±115

±75

±800

mAdc

Gate−Source Voltage

− Continuous

− Non−repetitive (tp ≤ 50 ms)

VGS

VGSM

±20

±40

Vdc

Vpk

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board

(Note 3) TA = 25°C

Derate above 25

°C

Thermal Resistance, Junction−to−Ambient

PD

RqJA

225

1.8

556

mW

mW/

°C

°C/W

Total Device Dissipation

(Note 4) Alumina Substrate, TA = 25°C

Derate above 25

°C

Thermal Resistance, Junction−to−Ambient

PD

RqJA

300

2.4

417

mW

mW/

°C

°C/W

Junction and Storage Temperature

TJ, Tstg

− 55 to

+150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. The Power Dissipation of the package may result in a lower continuous drain

current.

2. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

3. FR−5 = 1.0 x 0.75 x 0.062 in.

4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.

3

1

2

Device

Package

Shipping†

ORDERING INFORMATION

2N7002LT1G

SOT−23

(Pb−Free)

3000 Tape & Reel

N−Channel

SOT−23

CASE 318

STYLE 21

MARKING

DIAGRAM

2

1

3

2N7002LT3G

10,000 Tape & Reel

www.onsemi.com

2V7002LT1G

SOT−23

(Pb−Free)

3000 Tape & Reel

2V7002LT3G

10,000 Tape & Reel

60 V

7.5

W @ 10 V,

500 mA

RDS(on) MAX

115 mA

ID MAX

V(BR)DSS

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*Not for new design.

1

702 M

G

(Note: Microdot may be in either location)

*Date Code orientation and/or position may

vary depending upon manufacturing location.

702

= Device Code

M

= Date Code*

G

= Pb−Free Package

2N7002LT1H*

3000 Tape & Reel

Similar Part No. - 2V7002LT1G

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	2V7002LT1G	100Kb / 4P	Small Signal MOSFET 60 V, 115 mA, N.Channel SOT.23 May, 2012 ??Rev. 6

More results

Similar Description - 2V7002LT1G

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	BS170	52Kb / 4P	Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET April, 2004 ??Rev. 4
List of Unclassifed Man...	CMT2N7000	118Kb / 5P	Small Signal MOSFET
Leshan Radio Company	L2N7002KWT1G	685Kb / 6P	Small Signal MOSFET
Leshan Radio Company	LNTA7002NT1G	410Kb / 5P	Small Signal MOSFET
ON Semiconductor	NTR5103N	133Kb / 5P	Small Signal MOSFET October, 2016 ??Rev. 1
ON Semiconductor	NTNS41006PZ	80Kb / 6P	Small Signal MOSFET May, 2017 ??Rev. 1
SEMTECH ELECTRONICS LTD...	2N7000	148Kb / 2P	Small Signal MOSFET
ON Semiconductor	NTNS3C94NZ	71Kb / 6P	Small Signal MOSFET December, 2016 ??Rev. 1
	NTJS4405N	135Kb / 5P	Small Signal MOSFET October, 2011 ??Rev. 6
	NTJD4158C	91Kb / 7P	Small Signal MOSFET Febuary, 2015 ??Rev. 5
	NTJD4001N	72Kb / 5P	Small Signal MOSFET May, 2015 ??Rev. 7

More results

2V7002LT1G Datasheet(PDF) 1 Page - ON Semiconductor

2V7002LT1G Datasheet(HTML) 1 Page - ON Semiconductor

Similar Part No. - 2V7002LT1G

Similar Description - 2V7002LT1G

Html Pages

1 2 3 4

Datasheet Download

Link URL