BSS84LT1_16 datasheet(2/4 Pages) ONSEMI

Part #	BSS84LT1

Description	Power MOSFET Single P-Channel

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Manufacturer	ONSEMI [ON Semiconductor]

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BSS84L, BVSS84L

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = −250 mAdc)

V(BR)DSS

−50

−

Vdc

Zero Gate Voltage Drain Current

(VDS = −25 Vdc, VGS = 0 Vdc)

(VDS = −50 Vdc, VGS = 0 Vdc)

(VDS = −50 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

−0.1

−15

−60

mAdc

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

IGSS

−

±10

nAdc

ON CHARACTERISTICS (Note 1)

Gate−Source Threaded Voltage (VDS = VGS, ID = −250 mA)

VGS(th)

−0.9

−

−2.0

Vdc

Static Drain−to−Source On−Resistance (VGS = −5.0 Vdc, ID = −100 mAdc)

RDS(on)

−

4.7

10

W

Transfer Admittance (VDS = −25 Vdc, ID = −100 mAdc, f = 1.0 kHz)

|yfs|

50

−

mS

DYNAMIC CHARACTERISTICS

Input Capacitance

VDS = 5.0 Vdc

Ciss

−

36

−

pF

Output Capacitance

VDS = 5.0 Vdc

Coss

−

17

−

Transfer Capacitance

VDG = 5.0 Vdc

Crss

−

6.5

−

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

VDD = −15 Vdc, ID = −2.5 Adc,

RL = 50 W

td(on)

−

3.6

−

ns

Rise Time

tr

−

9.7

−

Turn−Off Delay Time

td(off)

−

12

−

Fall Time

tf

−

1.7

−

Gate Charge

VDD = −40 Vdc, ID = −0.5 A,

VGS = −10 V

QT

−

2.2

−

nC

SOURCE−DRAIN DIODE CHARACTERISTICS

Continuous Current

IS

−

−0.130

A

Pulsed Current

ISM

−

−0.520

Forward Voltage (Note 2)

VGS = 0 V, IS = −130 mA

VSD

−

−2.2

V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

TYPICAL ELECTRICAL CHARACTERISTICS

0

0.3

0.4

0.1

0.6

0.2

Figure 1. Transfer Characteristics

1

1.5

2

2.5

3

-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 2. On−Region Characteristics

VDS = 10 V

150

°C

25

°C

-55

°C

02

4

10

0

0.15

0.2

-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

6

0.05

8

0.3

0.1

3.5

0.5

0.25

13

9

57

-3.25 V

-2.75 V

-2.25 V

-2.5 V

-3.0 V

VGS = -3.5 V

4

0.35

0.4

0.5

0.45

TJ = 25°C

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