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STW48N60M2-4 Datasheet(PDF) 3 Page - STMicroelectronics |
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STW48N60M2-4 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 12 page STW48N60M2-4 Electrical ratings DocID026750 Rev 3 3/12 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate- source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 42 A ID Drain current (continuous) at TC = 100 °C 26 A IDM (1) Drain current (pulsed) 168 A PTOT Total dissipation at TC = 25 °C 300 W IAR Max. current during repetitive or single pulse avalanche (pulse width limited by Tjmax.) 7 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 1 J dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns Tstg Storage temperature range - 55 to 150 °C Tj Operating junction temperature range °C Notes: (1)Pulse width limited by safe operating area. (2)ISD ≤ 42 A, di/dt = 400 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V (3)VDS ≤ 480 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max. 0.42 °C/W Rthj-amb Thermal resistance junction-ambient max. 50 °C/W |
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