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STW23N85K5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STW23N85K5 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 13 page August 2015 DocID023547 Rev 3 1/13 This is information on a product in full production. www.st.com STW23N85K5 N- channel 850 V, 0.2 Ω typ., 19 A MDmesh™ K5 Power MOSFET in a TO-247 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STW23N85K5 850 V 0.275 Ω 19 A 250 W • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STW23N85K5 23N85K5 TO-247 Tube TO-247 1 2 3 |
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