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STW9NK95Z Datasheet(PDF) 5 Page - STMicroelectronics |
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STW9NK95Z Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 12 page STW9NK95Z Electrical characteristics 5/12 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise Time VDD= 475 V, ID= 3.6 A, RG= 4.7 Ω, VGS= 10 V (see Figure 14) (see Figure 19) 22 15 ns ns td(off) tf Turn-off delay time Fall time VDD= 475 V, ID= 3.6 A, RG= 4.7 Ω, VGS= 10 V (see Figure 14) (see Figure 19) 51 22 ns ns Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit BVGSO (1) 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Gate-source breakdown voltage Igs=±1 mA(open drain) 30 V Table 9. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 7 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 28 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD= 7.2 A, VGS=0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 7.2 A, di/dt = 100 A/µs, VDD= 60V, Tj = 25°C (see Figure 16) 660 5.9 18 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 7.2 A, di/dt = 100 A/µs, VDD= 60V, Tj = 150°C (see Figure 16) 800 7.4 18.6 ns µC A |
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