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TMS45160 Datasheet(PDF) 4 Page - Texas Instruments

Part No. TMS45160
Description  262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES
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Maker  TI [Texas Instruments]
Homepage  http://www.ti.com
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TMS45160 Datasheet(HTML) 4 Page - Texas Instruments

 
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TMS45160, TMS45160P
262144-WORD BY 16-BIT HIGH-SPEED
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS160D – AUGUST 1992 – REVISED JUNE 1995
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
power up
To achieve proper device operation, an initial pause of 200
µs followed by a minimum of eight RAS cycles is
required after power up to the full VCC level.These eight initialization cycles must include at least one refresh
(RAS-only or xCBR) cycle.


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