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STT7P2UH7 Datasheet(PDF) 5 Page - STMicroelectronics |
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STT7P2UH7 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 13 page STT7P2UH7 Electrical characteristics DocID025142 Rev 3 5/13 Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 7 A ISDM (1) Source-drain current (pulsed) - 28 A VSD (2) Forward on voltage ISD = 1 A, VGS = 0 - 1 V trr Reverse recovery time VDD = 16 V di/dt = 100 A/ms, ISD = 1 A - 15.8 ns Qrr Reverse recovery charge - 5.9 nC IRRM Reverse recovery current - 0.7 A Notes: (1) Pulse width limited by safe operating area. (2) Pulsed: pulse duration = 300 ms, duty cycle 1.5% For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. |
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