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TLP3540 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. TLP3540
Description  TOSHIBA Photocoupler GaAs Ired & Photo-MOS FET
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP3540 Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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TLP3540
2002-09-25
2
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
50
mA
Reverse voltage
VR
6
V
Junction temperature
Tj
125
°C
Off
-state output voltage
VOFF
60
V
On
-state current
ION
2
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-55~125
°C
Operating temperature
Topr
-20~85
°C
Lead solder temperature (10 s)
Tsol
260
°C
Isolation voltage (AC, 1 min., R.H.≤ 60%)
(Note 1)
BVS
1500
Vrms
(Note 1): Device considered a two
-terminal device: Pins 1, 2, 3 and 4 shorted together and
pins 5 and 8 shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VOFF
48
V
Forward current
IF
10
30
mA
On
-state current
ION
2
A
Operating temperature
Topr
25
50
°C
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 20 mA
1.0
1.2
1.4
V
Reverse voltage
IR
VR = 6 V
10
µA
Capacitance
CT
V = 0, f = 1 MHz
15
pF
Off
-state current
IOFF
VOFF = 20V, Ta = 50°C
1.0
4.0
nA
Capacitance
COFF
V = 0, f = 1MHz
600
1400
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
MIn.
Typ.
Max.
Unit
Trigger LED current
IFT
ION = 1 A
5
mA
On
-state resistance
RON
ION = 1 A, IF = 10mA
0.12


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