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STT3P2UH7 Datasheet(PDF) 3 Page - STMicroelectronics |
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STT3P2UH7 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 13 page STT3P2UH7 Electrical ratings DocID025027 Rev 3 3/13 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 20 V VGS Gate-source voltage ± 8 V ID Drain current (continuous) at Tpcb = 25 °C 3 A ID Drain current (continuous) at Tpcb = 100 °C 1.9 A IDM(1) Drain current (pulsed) 12 A PTOT Total dissipation at Tpcb = 25 °C 1.6 W Tstg Storage temperature range - 55 to 150 °C Tj Operating junction temperature range Notes: (1)Pulse width limited by safe operating area Table 3: Thermal data Symbol Parameter Value Unit Rthj-pcb(1) Thermal resistance junction-pcb max, single operation 78 °C/W Notes: (1)When mounted on 1inch² FR-4 board, 2 oz Cu For the P-channel Power MOSFET, current and voltage polarities are reversed. |
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