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TLP3530 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. TLP3530
Description  TOSHIBA Photocoupler GaAs Ired & Photo-Triac
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP3530 Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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TLP3530
2002-09-25
2
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
50
mA
Forward current derating (Ta ≥ 53°C)
∆IF / °C
-0.7
mA / °C
Peak forward current (100µs pulse, 100pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Off
-state output terminal voltage
VDRM
400
V
1.0(per 1 ch)
Ta=40°C
1.4(per 2 ch)
0.7(per 1 ch)
On
-state RMS Current
Ta=60°C
IT(RMS)
1.0(per 2ch)
A
-14.3(per 1ch)
On
-state current derating(Ta ≥ 40°C)
∆IT / °C
-20.0(per 2 ch)
mA / °C
Peak current from snubber circuit
(100µs pulse, 120pps)
ISP
2
A
Peak nonrepetitive surge current(50Hz,peak)
ITSM
10
A
Junction temperature
Tj
110
°C
Storage temperature range
Tstg
-40~125
°C
Operating temperature range
Topr
-20~80
°C
Lead soldering temperature (10s)
Tsol
260
°C
Isolation voltage (AC, 1min., R.H.≤ 60%)
(Note)
BVS
2500
Vrms
(Note): Device considered a two terminal: LED side pins shorted together and detector side pins shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min
Typ.
Max
Unit
Supply voltage
VAC
120
Vac
Forward voltage
IF
15
20
25
mA
Peak current from snubber circuit
ISP
1
A
Operating temperature
Topr
-20
80
°C


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