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TLP3064 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TLP3064
Description  TOSHIBA Photocoupler GaAs Ired & Photo-Triac
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP3064 Datasheet(HTML) 3 Page - Toshiba Semiconductor

   
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TLP3064
2002-09-25
3
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF=10mA
1.2
1.4
1.7
V
Reverse current
IR
VR=3 V
10
µA
Capacitance
CT
V=0, f=1MHz
30
pF
Peak off
-state current
IDRM
VDRM=600V
10
1000
nA
Peak on
-state voltage
VTM
ITM=100mA
3.0
V
Holding current
IH
0.6
mA
Critical rate of rise of
off
-state voltage
dv / dt
Vin=240rms
Ta=85°C
200
500
V / µs
Critical rate of rise of
commutating voltage
dv / dt(c)
Vin=60Vrms
IT=15mArms
0.2
V / µs
Coupled Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Trigger LED current
IFT
VT=6V, resistive load
3
mA
Inhibit voltage
VIH
IF=rated IFT
50
V
Leakage in inhibited state
IIH
IF=rated IFT
VT=rated VDRM
600
µA
Capacitance input to output
CS
VS=0, f=1MHz
0.8
pF
Isolation resistance
RS
VS=500V, R.H. ≤ 60%
1×10
12
10
14
AC, 1 minute
5000
AC, 1 second, in oil
10000
Vrms
Isolation voltage
BVS
DC, 1 minute, in oil
10000
Vdc


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