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STR2N2VH5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STR2N2VH5 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 13 page This is information on a product in full production. July 2014 DocID023799 Rev 4 1/13 STR2N2VH5 N-channel 20 V, 0.025 Ω typ., 2.3 A STripFET™ H5 Power MOSFET in a SOT-23 package Datasheet — production data Figure 1. Internal schematic diagram Features • Low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. SOT-23 1 2 3 Order code VDS RDS(on) max ID PTOT STR2N2VH5 20 V 0.03 Ω (V GS=4.5 V) 2.3 A 0.35 W Table 1. Device summary Order code Marking Packages Packaging STR2N2VH5 STD1 SOT-23 Tape and reel www.st.com |
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