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STPS10SM80C Datasheet(PDF) 2 Page - STMicroelectronics |
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STPS10SM80C Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 11 page Characteristics STPS10SM80C 2/11 Doc ID 018721 Rev 1 1 Characteristics When the two diodes 1 and 2 are used simultaneously: ΔT j(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 2. Absolute ratings (limiting values, per diode, at Tamb = 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 80 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current, δ = 0.5 TO-220AB, I2PAK, D2PAK Tc = 160 °C Tc = 160 °C Per diode Per device 5 10 A TO-220FPAB Tc = 150 °C Tc = 140 °C Per diode Per device 5 10 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tc = 25 °C 150 A PARM (1) 1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. Repetitive peak avalanche power Tj = 25 °C, tp = 1 µs 3200 W VARM (2) 2. See Figure 13 Maximum repetitive peak avalanche voltage tp < 1 µs, Tj < 150 °C, IAR < 9.6 A 100 V VASM (2) Maximum single pulse peak avalanche voltage tp < 1 µs, Tj < 150 °C, IAR < 9.6 A 100 V Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature(3) 3. condition to avoid thermal runaway for a diode on its own heatsink 175 °C Table 3. Thermal parameters Symbol Parameter Value Unit Rth(j-c) Junction to case TO-220AB I2PAK, D2PAK per diode 3.20 °C/W total 1.95 TO-220FPAB per diode 6.10 total 4.85 Rth(c) Coupling TO-220AB I2PAK, D2PAK 0.70 °C/W TO-220FPAB 3.60 dPtot dTj < 1 Rth(j-a) |
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