Characteristics

STPS10SM80C

2/11

Doc ID 018721 Rev 1

1

Characteristics

When the two diodes 1 and 2 are used simultaneously:

ΔT

Table 2.

otherwise specified)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

80

V

30

A

Average forward current,

δ = 0.5

TO-220AB,

Per diode

Per device

5

10

A

TO-220FPAB

Per diode

Per device

5

10

Surge non repetitive

forward current

150

A

(1)

1.

For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the

avalanche energy measurements and diode validation in the avalanche are provided in the application

notes AN1768 and AN2025.

Repetitive peak avalanche power

3200

W

(2)

2.

See Figure 13

Maximum repetitive peak

avalanche voltage

100

V

(2)

Maximum single pulse

peak avalanche voltage

100

V

Storage temperature range

-65 to +175

°C

3.

condition to avoid thermal runaway for a diode on its own heatsink

175

°C

Table 3.

Thermal parameters

Symbol

Parameter

Value

Unit

Junction to case

TO-220AB

per diode

3.20

°C/W

total

1.95

TO-220FPAB

per diode

6.10

total

4.85

Coupling

TO-220AB

0.70

°C/W

TO-220FPAB

3.60

dPtot

dTj

<

1

Rth(j-a)