STPS10LCD100C datasheet(3/7 Pages) STMICROELECTRONICS

Part #	STPS10LCD100C

Description	Avalanche capability specified

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STPS10LCD100C

Characteristics

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Figure 1.

Average forward power

dissipation versus average forward

current

Figure 2.

Average forward current versus

ambient temperature

(

δ = 0.5)

0

1

2

3

4

5

0123

4567

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

T

δ=tp/T

tp

P

(W)

F(AV)

I

(A)

F(AV)

0

1

2

3

4

5

6

0

25

50

75

100

125

150

175

T

δ=tp/T

tp

I

(A)

F(AV)

T

(°C)

amb

Rth(j-a) = 15 °C/W

Rth(j-a) = Rth(j-c)

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

1

0.1

10

100

1000

1

t (µs)

p

P(t )

P

(1µs)

ARM p

ARM

0

0.2

0.4

0.6

0.8

1

1.2

0

25

50

75

100

125

150

T (°C)

j

P(T )

P

(25°C)

ARM

j

ARM

Figure 5.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

Figure 6.

Relative variation of thermal

impedance junction to ambient

versus pulse duration

0

10

20

30

40

50

60

70

80

1.E-03

1.E-02

1.E-01

1.E+00

T

C=75°C

T

C=100°C

T

C=125°C

IM

t

δ =0.5

I (A)

M

t(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

T

δ=tp/T

tp

Z/R

th(j-c)

t (s)

p

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