NDF02N60Z, NDD02N60Z

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2

THERMAL RESISTANCE

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

NDF02N60Z

NDD02N60Z

4.9

2.2

°C/W

Junction−to−Ambient Steady State

(Note 3) NDF02N60Z

(Note 4) NDD02N60Z

(Note 3) NDD02N60Z−1

51

41

80

3. Insertion mounted

4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).

Characteristic

Test Conditions

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

600

V

Breakdown Voltage Temperature Coeffi-

cient

Reference to 25°C,

0.6

V/°C

Drain−to−Source Leakage Current

25°C

1

mA

150°C

50

Gate−to−Source Forward Leakage

±10

mA

ON CHARACTERISTICS (Note 5)

Static Drain−to−Source On−Resistance

4.0

4.8

W

Gate Threshold Voltage

3.0

4.0

4.5

V

Forward Transconductance

1.7

S

DYNAMIC CHARACTERISTICS

Input Capacitance (Note 6)

f = 1.0 MHz

215

274

325

pF

Output Capacitance (Note 6)

25

34

45

Reverse Transfer Capacitance (Note 6)

4.0

7.0

10

Total Gate Charge (Note 6)

5.0

10

16

nC

Gate−to−Source Charge (Note 6)

1.5

2.4

4.0

Gate−to−Drain (“Miller”) Charge (Note 6)

3.5

5.3

8.0

Plateau Voltage

6.4

V

Gate Resistance

4.9

W

RESISTIVE SWITCHING CHARACTERISTICS

Turn−On Delay Time

9.0

ns

Rise Time

7.0

Turn−Off Delay Time

15

Fall Time

7.0

Diode Forward Voltage

1.6

V

Reverse Recovery Time

240

ns

Reverse Recovery Charge

0.7

mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.

6. Guaranteed by design.